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K. Itou

University of Tokyo

5

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30

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3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology

2020 IEDM | International Electron Devices Meeting
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Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

2018 IEDM | International Electron Devices Meeting
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3D scaling for insulated gate bipolar transistors (IGBTs) with low V ce(sat)

2017 ASICON | International Conference on ASIC
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Experimental verification of a 3D scaling principle for low V ce(sat) IGBT

2016 IEDM | International Electron Devices Meeting
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Citations (19)