3D scaling for insulated gate bipolar transistors (IGBTs) with low V ce(sat)

Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, — V ce(sat) reduction from 1.70 to 1.26 V — was experimentally confirmed for the 3D scaled IGBTs.