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K. Furukawa
K. Furukawa
Tokyo Institute of Technology
Optoelectronics
Electronic engineering
Computer science
Diffusion current
Carrier lifetime
3
Papers
14
Citations
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Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately
2018
ESSDERC | European Solid-State Device Research Conference
Takuya Hoshii
K. Furukawa
Kuniyuki Kakushima
M. Watanabe
N. Shigvo
T. Saraya
T. Takakura
K. Ltou
M. Fukui
S. Suzuki
Kengo Takeuchi
Iriya Muneta
Hitoshi Wakabayashi
Shinichi Nishizawa
Kazuo Tsutsui
Toshiro Hiramoto
Hiromichi Ohashi
H. Lwai
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Citations (3)
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
2018
IEDM | International Electron Devices Meeting
T. Saraya
K. Itou
T. Takakura
M. Fukui
S. Suzuki
Ken Takeuchi
Masanori Tsukuda
Y. Numasawa
K. Satoh
Tomoko Matsudai
Wataru Saito
Kuniyuki Kakushima
Takuya Hoshii
K. Furukawa
M. Watanabe
N. Shigyo
Kazuo Tsutsui
Hiroshi Iwai
Atsushi Ogura
Shinichi Nishizawa
Ichiro Omura
Hiromichi Ohashi
Toshiro Hiramoto
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Citations (9)
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment
2018
VLSIC | Symposium on VLSI Circuits
Kuniyuki Kakushima
Takuya Hoshii
M. Watanabe
N. Shizyo
K. Furukawa
T. Saraya
T. Takakura
K. Ltou
M. Fukui
S. Suzuki
Ken Takeuchi
Iriya Muneta
Hitoshi Wakabayashi
Y. Numasawa
Atsushi Ogura
Shinichi Nishizawa
Kazuo Tsutsui
Toshiro Hiramoto
Hiromichi Ohashi
Hiroshi Iwai
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Citations (2)
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