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K. Newton

IBM

18

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115

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A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

2014 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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High-resistivity SiGe BiCMOS technology development

2014 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with f T /f MAX of 250/330GHz

2014 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies

2008 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Influence of the Ge profile on VBE and current gain mismatch in Advanced SiGe BICMOS NPN HBT with 200 GHz fT

2006 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Investigation of Substrate Current Effects and Modeling of Substrate Resistance Network for RFCMOS

2006
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BSIM Model for MOSFET Flicker Noise Statistics: Technology Scaling, Area, and Bias Dependence

2006
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Statistical BSIM model for MOSFET 1/f noise

2005 Electronics Letters
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Generation and integration of scalable bipolar compact models [HBT example]

2004 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies

2003 Ibm Journal of Research and Development
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Citations (11)