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Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with f T /f MAX of 250/330GHz
Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with f T /f MAX of 250/330GHz
2014
Vibhor Jain
Thomas Kessler
Blaine J. Gross
John J. Pekarik
Panglijen Candra
Peter B. Gray
Bodhisatwa Sadhu
Alberto Valdes-Garcia
Peng Cheng
Renata Camillo-Castillo
K. Newton
Arun Natarajan
Scott K. Reynolds
David L. Harame
Keywords:
Physics
Electronic engineering
Electrical engineering
BiCMOS
circuit performance
bicmos process
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