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M. Dahlstrom

University of California, Santa Barbara
IBM

68

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Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

2016 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Modeling of U-shaped and plugged emitter resistance of high speed SiGe HBTs

2011 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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A method of forming a bipolar transistor structure

2011
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A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T /f MAX of 15/14 GHz VPNP, and f T /f MAX of 60/125 GHz HBT

2008 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Characterization and modeling of emitter-base leakage in high speed SiGe NPNs

2008 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
- M. Dahlstrom
- Renata Camillo-Castillo
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Present status and future directions of SiGe HBT technology

2007 International Journal of High Speed Electronics and Systems
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HighPerformance, LowComplexity Vertical PNPBJT Optimization fora0.24gmSiGeBiCMOSTechnology

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe BiCMOS Technology

2007 SiRF | Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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Influence of the Ge profile on VBE and current gain mismatch in Advanced SiGe BICMOS NPN HBT with 200 GHz fT

2006 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Schottky Barrier Diodes for Millimeter Wave SiGe BiCMOS Applications

2006 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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