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Bjorn Zetterlund

IBM

10

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A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

2014 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance

2014
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SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T /f MAX through reduced R b and C cb parasitics

2013 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Study of mutual and self-thermal resistance in 90nm SiGe HBTs

2013 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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A novel Ccb and Rb reduction technique for high-speed SiGe HBTs

2012 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

2012 REDW | Radiation Effects Data Workshop
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Modeling of U-shaped and plugged emitter resistance of high speed SiGe HBTs

2011 BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
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SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance

2006
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