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Riku Kobayashi
Riku Kobayashi
Materials science
Optoelectronics
Thin-film transistor
Doping
Oxide thin-film transistor
5
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2024
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Comparison of characteristics of thin film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3
2021
Japanese Journal of Applied Physics
Riku Kobayashi
Toshihide Nabatame
Takashi Onaya
Akihiko Ohi
Naoki Ikeda
Takahiro Nagata
Kazuhito Tsukagoshi
Atsushi Ogura
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Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress
2021
Japanese Journal of Applied Physics
Riku Kobayashi
Toshihide Nabatame
Takashi Onaya
Akihiko Ohi
Naoki Ikeda
Takahiro Nagata
Kazuhito Tsukagoshi
Atsushi Ogura
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Reliability of an amorphous carbon-doped In 2 O 3 thin-film transistors under negative and positive bias stress
2020
The Japan Society of Applied Physics
Riku Kobayashi
Toshihide Nabatame
Kazunori Kurishima
Takashi Onaya
Akihiko Ohi
Naoki Ikeda
Takahiro Nagata
Kazuhito Tsukagoshi
Atsushi Ogura
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Characteristics of amorphous carbon-doped In 2 O 3 TFT under bias stress in air and N 2
2020
The Japan Society of Applied Physics
Riku Kobayashi
Nabatame Toshihide
Onaya Takashi
Ohi Akihiko
Ikeda Naoki
Nagata Takahiro
Tsukagoshi Kazuhito
Ogura Atsushi
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Characteristics of oxide TFT using carbon-doped In 2 O 3 thin films by low-temperature ALD
2019
The Japan Society of Applied Physics
Riku Kobayashi
Toshihide Nabatame
Kazunori Kurishima
Takashi Onaya
Akihiko Ohi
Naoki Ikeda
Takahiro Nagata
Kazuhito Tsukagoshi
Atsushi Ogura
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