Old Web
English
Sign In
Acemap
>
Paper
>
Characteristics of oxide TFT using carbon-doped In 2 O 3 thin films by low-temperature ALD
Characteristics of oxide TFT using carbon-doped In 2 O 3 thin films by low-temperature ALD
2019
Riku Kobayashi
Toshihide Nabatame
Kazunori Kurishima
Takashi Onaya
Akihiko Ohi
Naoki Ikeda
Takahiro Nagata
Kazuhito Tsukagoshi
Atsushi Ogura
Keywords:
Carbon
Doping
Optoelectronics
Oxide thin-film transistor
Materials science
Thin film
carbon doped
oxide semiconductor
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]