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Reliability of an amorphous carbon-doped In 2 O 3 thin-film transistors under negative and positive bias stress
Reliability of an amorphous carbon-doped In 2 O 3 thin-film transistors under negative and positive bias stress
2020
Riku Kobayashi
Toshihide Nabatame
Kazunori Kurishima
Takashi Onaya
Akihiko Ohi
Naoki Ikeda
Takahiro Nagata
Kazuhito Tsukagoshi
Atsushi Ogura
Keywords:
Doping
Materials science
Amorphous carbon
Thin-film transistor
Optoelectronics
Oxide thin-film transistor
positive bias
Correction
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