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Characteristics of amorphous carbon-doped In 2 O 3 TFT under bias stress in air and N 2
Characteristics of amorphous carbon-doped In 2 O 3 TFT under bias stress in air and N 2
2020
Riku Kobayashi
Nabatame Toshihide
Onaya Takashi
Ohi Akihiko
Ikeda Naoki
Nagata Takahiro
Tsukagoshi Kazuhito
Ogura Atsushi
Keywords:
Materials science
bias stress
Reliability (semiconductor)
Oxide thin-film transistor
Doping
Optoelectronics
Amorphous carbon
Thin-film transistor
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