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H.J. Buhlmann
H.J. Buhlmann
Optoelectronics
High-electron-mobility transistor
Communication channel
Materials science
Electronic engineering
5
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19
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Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP
1998
IPRM | International Conference on Indium Phosphide and Related Materials
X. Letarte
P. Rojo-Romeo
J. Tardy
M. Bejar
M. Gendry
M.A. Py
M. Beck
H.J. Buhlmann
L. Ren
C. Villar
A. Sanz-Hervás
J.J. Serrano
J.M. Blanco
M. Aguilar
O. Marty
Véronique Soulière
Y. Monteil
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Low-frequency noise in pseudomorphically grown In0.52Al0.48As/In0.7Ga0.3As/InP HEMTS as a function of channel thickness
1997
F. Robin
L. Ren
H.J. Buhlmann
M. Beck
M. Ilegems
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A biomimetic materials approach towards the development of a neural cell-based biosensor
1996
EMBC | International Conference of the IEEE Engineering in Medicine and Biology Society
S.A. Makohliso
Patrick Aebischer
L. Giovangrandi
H.J. Buhlmann
M. Dutoit
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DC characterization and low-frequency noise in delta-doped, pulse-doped and uniformly-doped GaAs/AlGaAs MODFETs
1993
ESSDERC | European Solid-State Device Research Conference
Z.M. Shi
H.J. Buhlmann
M. Ilegems
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Characterization of AuGe/Ni/Au contacts on GaAs/AlGaAs heterostructures for low-temperature applications
1991
Journal of The Electrochemical Society
H.J. Buhlmann
M. Ilegems
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Citations (16)
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