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M. Ilegems

École Polytechnique Fédérale de Lausanne
École Polytechnique
Bell Labs

308

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8863

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CBE Regrown InGaAs/InP p-i-n Photodiodes for OEIC's

2010 DRC | Device Research Conference
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Preface: Phys. Status Solidi C 6/S2

2009 Physica Status Solidi (c)
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Microcavity light emitting diodes as efficient planar light emitters for telecommunication applications

2008
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Selective etching of AlInN/GaN heterostructures for MEMS technology

2007 Microelectronic Engineering
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Nitride‐based heterostructures grown by MOCVD for near‐ and mid‐infrared intersubband transitions

2007 Physica Status Solidi A-applications and Materials Science
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High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

2006 Applied Physics Letters
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Far-field radiation pattern of red emitting thin-film resonant cavity LEDs

2006 IEEE Photonics Technology Letters
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Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

2006 Applied Physics Letters
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Room-temperature polariton luminescence from a bulk GaN microcavity

2006 Physical Review B
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Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

2006 Journal of Applied Physics
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Citations (29)