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M. Bejar

École centrale de Lyon

7

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New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials

1999 Japanese Journal of Applied Physics
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New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

1998 IPRM | International Conference on Indium Phosphide and Related Materials
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Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers

1997 Materials Science and Engineering B-advanced Functional Solid-state Materials
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New scanning photoluminescence technique for mapping the lifetime and the doping density: application to carbon doped InGaAs/InP layers and heterostructures

1997 IPRM | International Conference on Indium Phosphide and Related Materials
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