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Adam W. Divergilio
Adam W. Divergilio
Tektronix
BiCMOS
Electrical engineering
Electronic engineering
bicmos technology
Capacitance
4
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18
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SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance
2014
Q.Z. Liu
James W. Adkisson
Vibhor Jain
Renata Camillo-Castillo
Marwan H. Khater
Peter B. Gray
John Jack Pekarik
Bjorn Zetterlund
Adam W. Divergilio
Michael L. Kerbaugh
D. L. Harame
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Citations (8)
Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency
2013
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
Vibhor Jain
Peng Cheng
Blaine J. Gross
Renata Camillo-Castillo
John J. Pekarik
James W. Adkisson
Qizhi Liu
Peter B. Gray
Vikas Kaushal
David L. Harame
Adam W. Divergilio
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Citations (6)
Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology
2012
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
John J. Pekarik
James W. Adkisson
Renata Camillo-Castillo
Peng Cheng
Adam W. Divergilio
Peter B. Gray
Vibhor Jain
Vikas Kaushal
Marwan H. Khater
Qizhi Liu
David L. Harame
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Citations (4)
SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance
2006
Qizhi Liu
James W. Adkisson
Vibhor Jain
R.A. Camillo-Castillo
Marwan H. Khater
Peter B. Gray
John Jack Pekarik
Bjorn Zetterlund
Adam W. Divergilio
Michael L. Kerbaugh
David Harame
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