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Sekine Katsuyuki
Sekine Katsuyuki
Electronic engineering
High-κ dielectric
Metal gate
Gate dielectric
Gate oxide
3
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SiN組成に依存するMONOSメモリ消去機構の遷移とそのサイクル劣化に与える影響 | 文献情報 | J-GLOBAL 科学技術総合リンクセンター
2010
IRPS | International Reliability Physics Symposium
Fujii Shosuke
Fujiki Jun
Yasuda Naoki
Fujitsuka Ryota
Sekine Katsuyuki
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Incremental Feature Location Using Dynamic Slicing
2009
Sekine Katsuyuki
Zenmyo Teruyoshi
Hayashi Shinpei
Saeki Motoshi
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Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond
2007
Koyama Masato
Koike Masahiro
Kamimuta Yuuichi
Suzuki Masamichi
Tatsumura Kosuke
Tsuchiya Yoshinori
Ichihara Reika
Goto Masakazu
Nagatomo Koji
Azuma Atsushi
Kawanaka Shigeru
Nakajima Kazuaki
Sekine Katsuyuki
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