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E.F. Crabbe

IBM

81

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4380

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45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications

2011 Ibm Journal of Research and Development
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Technology-Model-Product Parallel Design for High Performance and Rapid Time to Market 65nm Technology-Generation Microprocessors

2007 ASMC | Advanced Semiconductor Manufacturing Conference
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Reduction of RTA-driven intra-die variation via model-based layout optimization

2006 VLSIT | Symposium on VLSI Technology
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Technologies for scaling vertical transistor DRAM cells to 70 nm

2003 VLSIT | Symposium on VLSI Technology
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Super-halo asymmetric vertical pass transistor design for ultra-dense DRAM technologies

2003 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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On the retention time distribution of dual-channel vertical DRAM technologies

2003 VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
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A high-performance sub-0.25 /spl mu/m CMOS technology with multiple thresholds and copper interconnects

1998 VLSIT | Symposium on VLSI Technology
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Functional high-speed characterization and modeling of a six-layer copper wiring structure and performance comparison with aluminum on-chip interconnections

1998 IEDM | International Electron Devices Meeting
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High-performance sub-0.08 /spl mu/m CMOS with dual gate oxide and 9.7 ps inverter delay

1998 IEDM | International Electron Devices Meeting
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Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates

1997 IEDM | International Electron Devices Meeting
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Citations (29)