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A. Ray

IBM

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Ultra-High Endurance and Low I OFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory

2018 IEDM | International Electron Devices Meeting
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High Endurance Self-Heating OTS-PCM Pillar Cell for 3D Stackable Memory

2018 VLSIT | Symposium on VLSI Technology
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A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

2018 IEEE Transactions on Electron Devices
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Reliability benefits of a metallic liner in confined PCM

2018 IRPS | International Reliability Physics Symposium
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An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

2017 IEDM | International Electron Devices Meeting
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Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability

2016 IEDM | International Electron Devices Meeting
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ALD-based confined PCM with a metallic liner toward unlimited endurance

2016 IEDM | International Electron Devices Meeting
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異常熱安定性をドープしたGa Sb Geを用いた128Mb相変化メモリチップの信頼性研究【Powered by NICT】

2016
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A Double-Data- Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read -Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications

2016 IMW | International Memory Workshop
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無制限耐久性に対する金属ライナを持つA LDベース閉じ込められたPCM【Powered by NICT】

2016
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