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S. Yamamoto
S. Yamamoto
Renesas Electronics
Electronic engineering
Dielectric strength
Time-dependent gate oxide breakdown
Engineering
Static random-access memory
5
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119
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Comprehensive lifetime prediction for intrinsic and extrinsic TDDB failures in Cu/Low-k interconnects
2011
IITC | International Interconnect Technology Conference
Naohito Suzumura
M. Ogasawara
Kazuya Makabe
Takao Kamoshima
T. Ouchi
S. Yamamoto
Takeshi Furusawa
E. Murakami
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Citations (3)
Electric-field and temperature dependencies of TDDB degradation in Cu/Low-K damascene structures
2008
IRPS | International Reliability Physics Symposium
Naohito Suzumura
S. Yamamoto
D. Kodama
H. Miyazaki
M. Ogasawara
J. Komori
E. Murakami
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Citations (14)
A study of SRAM NBTI by OTF measurement
2008
IRPS | International Reliability Physics Symposium
H. Aono
E. Murakami
K. Shiga
F. Fujita
S. Yamamoto
M. Ogasawara
Yasuo Yamaguchi
K. Yanagisawa
K. Kubota
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Citations (13)
A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics
2006
IRPS | International Reliability Physics Symposium
Naohito Suzumura
S. Yamamoto
D. Kodama
K. Makabe
J. Komori
E. Murakami
S. Maegawa
K. Kubota
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Citations (80)
Neutron-induced soft error in logic devices using quasi-monoenergetic neutron beam
2004
IRPS | International Reliability Physics Symposium
S. Yamamoto
K. Kokuryou
Y. Okada
J. Komori
E. Murakami
K. Kubota
N. Matsuoka
Y. Nagai
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Citations (9)
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