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H. Aono
H. Aono
Renesas Electronics
Electronic engineering
Engineering
MOSFET
Electric field
Degradation (geology)
8
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88
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A new aspect of time-dependent clustering model for non-uniform dielectric TDDB
2016
IRPS | International Reliability Physics Symposium
Tatsuo Shimizu
Naohito Suzumura
K. Ohgata
Hideaki Tsuchiya
H. Aono
M. Ogasawara
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Citations (8)
A Coarse-Graining Approach to Rate Equations of the Composite AC-NBTI Model
2015
IEEE Transactions on Electron Devices
Eiichi Murakami
H. Aono
M. Ogasawara
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Citations (4)
Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime
2005
Microelectronics Reliability
H. Aono
E. Murakami
Kousuke Okuyama
Akio Nishida
Masataka Minami
Y. Ooji
K. Kubota
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Citations (27)
Modeling of NBTI degradation and its impact on electric field dependence of the lifetime
2004
IRPS | International Reliability Physics Symposium
H. Aono
E. Murakami
Kousuke Okuyama
Akio Nishida
Masataka Minami
Y. Ooji
K. Kubota
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Citations (21)
NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation
2002
IRPS | International Reliability Physics Symposium
H. Aono
E. Murakami
Kousuke Okuyama
K. Makabe
Kenichi Kuroda
Kikuo Watanabe
H. Ozaki
K. Yanagisawa
K. Kubota
Yuzuru Ohji
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Citations (9)
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