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Dmitri Alex Tschumakow
Dmitri Alex Tschumakow
Infineon Technologies
Heterojunction bipolar transistor
CMOS
Physics
Optoelectronics
Logic gate
3
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(Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS
2020
Dirk Manger
Josef Boeck
K. Aufinger
Sabine Boguth
Robert Gruenberger
Thomas Popp
Boris Binder
Claudia Hengst
Soran Majied
Matthias Markert
Andreas Pribil
Steffen Rothenhaeusser
Dmitri Alex Tschumakow
Claus Dahl
Thomas Bever
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Integration of SiGe HBT with f T =305GHz, f max =537GHz in 130nm and 90nm CMOS.
2018
Dirk Manger
Wolfgang Liebl
S. Boguth
B. Binder
K. Aufinger
Claus Dahl
C Hengst
Andreas Pribil
J. Oestreich
S. Rohmfeld
Steffen Rothenhaeusser
Dmitri Alex Tschumakow
J. Boeck
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Integration of SiGe HBT with $\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$ in 130nm and 90nm CMOS
2018
Dirk Manger
Wolfgang Liebl
Sabine Boguth
B. Binder
Klaus Aufinger
Claus Dahl
C. Hengst
Andreas Pribil
J. Oestreich
S. Rohmfeld
Steffen Rothenhaeusser
Dmitri Alex Tschumakow
Josef Boeck
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