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(Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS
(Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS
2020
Dirk Manger
Josef Boeck
K. Aufinger
Sabine Boguth
Robert Gruenberger
Thomas Popp
Boris Binder
Claudia Hengst
Soran Majied
Matthias Markert
Andreas Pribil
Steffen Rothenhaeusser
Dmitri Alex Tschumakow
Claus Dahl
Thomas Bever
Keywords:
Epitaxy
CMOS
Materials science
Heterojunction bipolar transistor
Optoelectronics
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