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Integration of SiGe HBT with f T =305GHz, f max =537GHz in 130nm and 90nm CMOS.
Integration of SiGe HBT with f T =305GHz, f max =537GHz in 130nm and 90nm CMOS.
2018
Dirk Manger
Wolfgang Liebl
S. Boguth
B. Binder
K. Aufinger
Claus Dahl
C Hengst
Andreas Pribil
J. Oestreich
S. Rohmfeld
Steffen Rothenhaeusser
Dmitri Alex Tschumakow
J. Boeck
Keywords:
Physics
CMOS
Heterojunction bipolar transistor
Optoelectronics
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