Old Web
English
Sign In
Acemap
>
authorDetail
>
D. H. Triyoso
D. H. Triyoso
Freescale Semiconductor
Antiferroelectricity
Ferroelectricity
Materials science
Analytical chemistry
Distortion
4
Papers
3
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Ferroelectric and Antiferroelectric Hf/Zr oxide films: past, present and future
2021
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
D. H. Triyoso
Robert D. Clark
Wenke Weinreich
C. Mart
Thomas Kämpfe
Steven Consiglio
Vineetha Mukundan
Alain C. Diebold
K. Tapily
C. Wajda
G. Leusink
Show All
Source
Cite
Save
Citations (0)
Atomic-scale imaging of polarization switching in an (anti-)ferroelectric memory material: Zirconia (ZrO2)
2020
VLSIT | Symposium on VLSI Technology
S. Lombardo
C.W. Nelson
K. Chae
S. Reyes-Lillo
M. Tian
N. Tasneem
Zheng Wang
M. Hoffmann
D. H. Triyoso
Steven Consiglio
Kandabara Tapily
Robert D. Clark
G. J. Leusink
Kyeongjae Cho
Andrew C. Kummel
J. Kacher
Asif Islam Khan
Show All
Source
Cite
Save
Citations (2)
Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films
2008
Surface and Interface Analysis
Z. X. Jiang
K. Kim
D. D. Sieloff
Tien Ying Luo
A. Varghese
D. H. Triyoso
T. Guenther
B. Robichaud
J. Benavides
Show All
Source
Cite
Save
Citations (1)
TEMAHf,TEMAZrおよびオゾンを用いて原子層蒸着したHf 1-x Zr x O 2 の物理的,電気的性質
2008
Journal of The Electrochemical Society
D. H. Triyoso
R. Gregory
M. Park
K Wang
S-I. Lee
Show All
Source
Cite
Save
Citations (0)
1