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G. D. Via

Air Force Research Laboratory
Wright-Patterson Air Force Base

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重イオン放射線への曝露後の商用既製algan/GaN HEMT素子の信頼性研究【Powered by NICT】

2017 Microelectronics Reliability
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GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

2016 MRS Advances
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Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

2016 Electronics
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High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

2015 CSICS | Compound Semiconductor Integrated Circuit Symposium
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Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

2015 IEEE Electron Device Letters
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Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

2015 IEEE Transactions on Electron Devices
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Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

2015 Microelectronics Reliability
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Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

2014 Physica Status Solidi (c)
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Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

2013 Journal of Vacuum Science & Technology B
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Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

2012 Microelectronics Reliability
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