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Roland Baranyai
Roland Baranyai
University of Bristol
Diamond
Engineering
Nuclear magnetic resonance
Epitaxy
Substrate (chemistry)
4
Papers
53
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(Invited) Diamond - the Unknowns and Challenges to Make It Work for GaN Electronics
2016
Martin Kuball
Julian Anaya
Dong Liu
Roland Baranyai
Huarui Sun
James W Pomeroy
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Wafer-scale GaN HEMT performance enhancement by diamond substrate integration
2014
Physica Status Solidi (c)
G. D. Via
Jonathan G. Felbinger
John D. Blevins
Kelson D. Chabak
Gregg H. Jessen
James K. Gillespie
R. Fitch
A. Crespo
Karynn A. Sutherlin
B. Poling
S. Tetlak
R. Gilbert
T. Cooper
Roland Baranyai
James W Pomeroy
Martin Kuball
J. J. Maurer
A. Bar-Cohen
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Citations (24)
Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
2013
IEEE Transactions on Electron Devices
Ashu Wang
Marko J. Tadjer
Travis J. Anderson
Roland Baranyai
James W Pomeroy
Tatyana I. Feygelson
Karl D. Hobart
Bradford B. Pate
F. Calle
Martin Kuball
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Citations (26)
GaN Power Transistors with Integrated Thermal Management
2013
Charles R. Eddy
Travis J. Anderson
Andrew D. Koehler
Neeraj Nepal
David J. Meyer
Marko J Tadjer
Roland Baranyai
James W Pomeroy
Martin Kuball
Tatyana I. Feygelson
Bradford B. Pate
Michael A. Mastro
Jennifer K. Hite
Mario G. Ancona
Fritz J. Kub
Karl D. Hobart
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Citations (3)
1