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B. Poling
B. Poling
Wyle Laboratories
Optoelectronics
Electronic engineering
Gallium nitride
High-electron-mobility transistor
Transistor
5
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133
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Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps
2015
Microelectronics Reliability
A. Sasikumar
A. R. Arehart
G. D. Via
B. Winningham
B. Poling
Eric R. Heller
S. A. Ringel
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Citations (4)
Wafer-scale GaN HEMT performance enhancement by diamond substrate integration
2014
Physica Status Solidi (c)
G. D. Via
Jonathan G. Felbinger
John D. Blevins
Kelson D. Chabak
Gregg H. Jessen
James K. Gillespie
R. Fitch
A. Crespo
Karynn A. Sutherlin
B. Poling
S. Tetlak
R. Gilbert
T. Cooper
Roland Baranyai
James W Pomeroy
Martin Kuball
J. J. Maurer
A. Bar-Cohen
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Citations (24)
Recent Progress in GaN-on-Diamond Device Technology
2014
Karynn A. Sutherlin
S. Tetlak
B. Poling
R. Gilbert
B. Moore
John Hoelscher
B. Stumpff
A. Bar-Cohen
A. Kane
Wright-Patterson Afb
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Citations (19)
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
2013
Solid-state Electronics
A. R. Arehart
A. Sasikumar
Siddharth Rajan
G. D. Via
B. Poling
B. Winningham
Eric R. Heller
David F. Brown
Yi Pei
F. Recht
Umesh K. Mishra
S. A. Ringel
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Citations (54)
Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs
2010
IEDM | International Electron Devices Meeting
A. R. Arehart
A. Sasikumar
G. D. Via
B. Winningham
B. Poling
Eric R. Heller
S. A. Ringel
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Citations (32)
1