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Man Chang

Gwangju Institute of Science and Technology
Samsung

78

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Reliability characterization of 10nm FinFET technology with multi-V T gate stack for low power and high performance

2016 IEDM | International Electron Devices Meeting
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Self-Limited Switching in Ta2O5/TaOx Memristors Exhibiting Uniform Multilevel Changes in Resistance

2015 Advanced Functional Materials
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Performance of threshold switching in chalcogenide glass for 3D stackable selector

2013 VLSIT | Symposium on VLSI Technology
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Bi‐Layered Reram: Multi‐Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic

2013
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Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

2013 Scientific Reports
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Modeling for multilevel switching in oxide-based bipolar resistive memory.

2012 Nanotechnology
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2011 Nature Materials
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Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

2011 Microelectronic Engineering
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Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

2011 IEEE Electron Device Letters
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Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

2010 IEEE Electron Device Letters
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Citations (18)