Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels

We have investigated the passivation effects of high-pressure hydrogen annealing (HPHA) on silicon nanowire (Si NW) metal oxide semiconductor field effect transistors (MOSFETs) with multi-wire channels. Compared to the conventional forming gas annealing (FGA) process, the results show that HPHA can significantly improve device performance parameters such as threshold voltage, subthreshold slope, mobility, and ION/IOFF ratio. This enhancement is attributed to the effective passivation of the interface traps between the SiO2 and the Si NW channel. Therefore, HPHA can be a promising process for the implementation of the Si NW MOSFET.