author-photo

Hyunsang Hwang

Gwangju Institute of Science and Technology

211

Papers

5618

Citations

Citation Trend

Filter By

Papers (159) Sort By

Journal Conference Others

Accelerated Publication: Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

2013 Microelectronic Engineering
Show All
- Source
- Cite
- Save
Citations (51)
Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment

2012 Japanese Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (1)
A study of the leakage current in TiN/HfO2/TiN capacitors

2012 Microelectronic Engineering
Show All
- Source
- Cite
- Save
Citations (17)
MIM-type cell selector for high-density and low-power cross-point memory application

2012 Microelectronic Engineering
Show All
- Source
- Cite
- Save
Citations (10)
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices

2012 Physica Status Solidi (a)
Show All
- Source
- Cite
- Save
Citations (29)
Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications

2012 IEEE Electron Device Letters
Show All
- Source
- Cite
- Save
Citations (50)
Ultrathin (l10nm) Nb 2 O 5 /NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

2012 VLSIT | Symposium on VLSI Technology
Show All
- Source
- Cite
- Save
Citations (67)
Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices

2011 Applied Physics Letters
Show All
- Source
- Cite
- Save
Citations (13)
Resistive switching characteristics and mechanism of thermally grown WOx thin films

2011 Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (49)
Characterization and passivation of band gap states in metal-oxide-semiconductor field effect transistors with polycrystalline silicon channel

2011 IPFA | International Symposium on the Physical and Failure Analysis of Integrated Circuits
Show All
- Source
- Cite
- Save
Citations (1)