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B. Goolsby
B. Goolsby
Motorola
Gate dielectric
Electronic engineering
High-κ dielectric
Dielectric
Metal gate
2
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7
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0
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Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO/sub 2/) gate dielectric
2004
VLSIT | Symposium on VLSI Technology
A.V.-Y. Thean
Anne Vandooren
S. Kalpat
Y. Du
I. To
J. Hughes
T. Stephens
B. Goolsby
Ted R. White
Alex Barr
Leo Mathew
M. Huang
S. Egley
M. Zavala
D. Eades
K. Sphabmixay
J. Schaeffer
Dina H. Triyoso
M. Rossow
D. Roan
Daniel Thanh-Khac Pham
Raj Rai
S. Murphy
Billy Nguyen
B.E. White
A. Duvallet
Thuy B. Dao
J. Mogab
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Citations (7)
Scanning Probe Microscope Imaging with Principal Component Analysis of Cell Types
2002
V.M. Ayres
B. Goolsby
F.M. Salam
M M Yu
Ning Xi
Donna H. Wang
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