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S. Kalpat
S. Kalpat
Motorola
Gate dielectric
Electronic engineering
High-κ dielectric
Dielectric
MOSFET
2
Papers
14
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Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO/sub 2/) gate dielectric
2004
VLSIT | Symposium on VLSI Technology
A.V.-Y. Thean
Anne Vandooren
S. Kalpat
Y. Du
I. To
J. Hughes
T. Stephens
B. Goolsby
Ted R. White
Alex Barr
Leo Mathew
M. Huang
S. Egley
M. Zavala
D. Eades
K. Sphabmixay
J. Schaeffer
Dina H. Triyoso
M. Rossow
D. Roan
Daniel Thanh-Khac Pham
Raj Rai
S. Murphy
Billy Nguyen
B.E. White
A. Duvallet
Thuy B. Dao
J. Mogab
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ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability
2003
IEDM | International Electron Devices Meeting
H. Tseng
M.E. Ramon
L. Hebert
Philip J. Tobin
D. Triyoso
J. Grant
Z.X. Jiang
D. Roan
Srikanth B. Samavedam
David C. Gilmer
S. Kalpat
C. Hobbs
William J. Taylor
Olubunmi Adetutu
Bruce E. White
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Citations (7)
1