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V. Tokranov
V. Tokranov
University of Texas at Austin
Passivation
MOSFET
Electronic engineering
Optoelectronics
Dispersion (optics)
3
Papers
31
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Hydrogen incorporation of metal gate HfO 2 MOS structures on In 0.2 Ga 0.8 As substrate with Si interface passivation layer
2007
In Jo Ok
Hyoung Sub Kim
Manhong Zhang
F. Zhu
S. Park
Jung Hwan Yum
S. Koveshnikov
W. Tsai
V. Tokranov
M. Yakimov
S. Oktyabrsky
Jack C. Lee
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Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation
2006
DRC | Device Research Conference
I. Ok
Hyoung Sub Kim
Manhong Zhang
T. Lee
F. Zhu
G. Thareja
L. Yu
S. Koveshnikov
W. Tsai
V. Tokranov
M. Yakimov
S. Oktyabrsky
Jack C. Lee
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Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer
2006
IEDM | International Electron Devices Meeting
I. Ok
Hyoungsub Kim
Manhong Zhang
T. Lee
F. Zhu
L. Yu
S. Koveshnikov
W. Tsai
V. Tokranov
M. Yakimov
S. Oktyabrsky
Jack C. Lee
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Citations (30)
1