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Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation
Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation
2006
I. Ok
Hyoung Sub Kim
Manhong Zhang
T. Lee
F. Zhu
G. Thareja
L. Yu
S. Koveshnikov
W. Tsai
V. Tokranov
M. Yakimov
S. Oktyabrsky
Jack C. Lee
Keywords:
Physics
Optoelectronics
Spectroscopy
Hafnium oxide
Electronic engineering
Substrate (chemistry)
MOSFET
Gallium arsenide
Passivation
Silicon
mosfet circuits
Correction
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