Hydrogen incorporation of metal gate HfO 2 MOS structures on In 0.2 Ga 0.8 As substrate with Si interface passivation layer

Recently, we have investigated the GaAs MOSFET and InGaAs MOS structure using Si interface passivation layer (IPL) and HfOz as gate dielectric. In this work, wc havc invcstigatcd hydrogcn incorporation effects for Ino.zGao.&s MOSCAP using the same oxide of HfOl as gate Insulator with Si IPL and Hz annealing at 500°C for 30min. Excellent electrical characteristics with Low Dit (-2.8.10'~) with low frequency dispersion (< 0.1% and 4OmV) has been obtained.