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H. Wen
H. Wen
University of Oklahoma
Analytical chemistry
Physics
Photoemission spectroscopy
Amorphous solid
Dielectric
3
Papers
88
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In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm
2008
Applied Physics Letters
S. Koveshnikov
Niti Goel
Prashant Majhi
H. Wen
M. B. Santos
S. Oktyabrsky
V. Tokranov
R. Kambhampati
R. Moore
F. Zhu
J. Lee
W. Tsai
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Citations (68)
Band offsets between amorphous LaAlO3 and In0.53Ga0.47As
2007
Applied Physics Letters
Niti Goel
W. Tsai
C.M. Garner
Yuekai Sun
P. Pianetta
Maitri P. Warusawithana
D.G. Schlom
H. Wen
Chomani Gaspe
Joel C. Keay
Marcelino Bicho Dos Santos
Lyudmila V. Goncharova
Eric Garfunkel
T. Gustafsson
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Citations (11)
Band offsets between amorphous LaAlO{sub 3} and In{sub 0.53}Ga{sub 0.47}As
2007
Applied Physics Letters
N. Goel
Wilman Tsai
C.M. Garner
Y. Sun
P. Pianetta
Maitri P. Warusawithana
D.G. Schlom
H. Wen
Chomani Gaspe
Joel C. Keay
M. B. Santos
Lyudmila V. Goncharova
Eric Garfunkel
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Citations (9)
1