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Wilman Tsai
Wilman Tsai
SEMATECH
Analytical chemistry
Physics
Amorphous solid
Passivation
Oxide
4
Papers
91
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Materials and Technologies for III-V MOSFETs
2010
S. Oktyabrsky
Yoshio Nishi
S. Koveshnikov
Wei-E Wang
Niti Goel
Wilman Tsai
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Citations (7)
The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics
2010
Applied Physics Letters
Masaharu Kobayashi
Gaurav Thareja
Yun Sun
Niti Goel
Mike Garner
Wilman Tsai
P. Pianetta
Yoshio Nishi
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Citations (9)
Band offsets between amorphous LaAlO{sub 3} and In{sub 0.53}Ga{sub 0.47}As
2007
Applied Physics Letters
N. Goel
Wilman Tsai
C.M. Garner
Y. Sun
P. Pianetta
Maitri P. Warusawithana
D.G. Schlom
H. Wen
Chomani Gaspe
Joel C. Keay
M. B. Santos
Lyudmila V. Goncharova
Eric Garfunkel
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Citations (9)
Determination of interface energy band diagram between (100)Si and mixed Al–Hf oxides using internal electron photoemission
2003
Applied Physics Letters
V. V. Afanas’ev
Andre Stesmans
Wilman Tsai
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Citations (66)
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