Band offsets between amorphous LaAlO{sub 3} and In{sub 0.53}Ga{sub 0.47}As

The band offsets between an amorphous LaAlO{sub 3} dielectric prepared by molecular-beam deposition and a n-type In{sub 0.53}Ga{sub 0.47}As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAlO{sub 3}/InGaAs interface are 3.1{+-}0.1 and 2.35{+-}0.2 eV, respectively. The band gap of LaAlO{sub 3}, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2{+-}0.1 eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6 nm thick amorphous LaAlO{sub 3}.