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S. Koveshnikov
S. Koveshnikov
State University of New York System
Optoelectronics
Oxide
High-κ dielectric
Gate oxide
MOSFET
3
Papers
75
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LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC
2011
International Journal of High Speed Electronics and Systems
Sergey L. Rumyantsev
W. Stillman
Michael S. Shur
Tassilo Heeg
Darrell G. Schlom
S. Koveshnikov
Rama Kambhampati
V. Tokranov
Serge Oktyabrsky
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Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide
2009
Journal of Crystal Growth
S. Oktyabrsky
V. Tokranov
S. Koveshnikov
M. Yakimov
R. Kambhampati
H. Bakhru
R. Moore
W. Tsai
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In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm
2008
Applied Physics Letters
S. Koveshnikov
Niti Goel
Prashant Majhi
H. Wen
M. B. Santos
S. Oktyabrsky
V. Tokranov
R. Kambhampati
R. Moore
F. Zhu
J. Lee
W. Tsai
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Citations (68)
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