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Seiji Inumiya

Toshiba

79

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584

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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

2013 Microelectronics Reliability
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A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

2011 IEDM | International Electron Devices Meeting
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Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement

2009 The Japan Society of Applied Physics
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Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs

2009 IRPS | International Reliability Physics Symposium
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Impact of tantalum composition in TaC/HfSiON gate stack on device performance of aggressively scaled CMOS devices with SMT and strained CESL

2008 VLSIT | Symposium on VLSI Technology
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Chemical controllability of charge states of nitrogen-related defects inHfOxNy: First-principles calculations

2008 Physical Review B
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Photoemission Study of Metal/HfSiON Gate Stack

2008
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A cost-conscious 32nm CMOS platform technology with advanced single exposure lithography and gate-first metal gate/high-k process

2008 IEDM | International Electron Devices Meeting
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Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-k/Metal Gate Stack Metal-Oxide-Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm

2008 Japanese Journal of Applied Physics
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Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

2007 Journal of Applied Physics
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