Old Web
English
Sign In
Acemap
>
authorDetail
>
Koji Nagatomo
Koji Nagatomo
Toshiba
Electronic engineering
Dielectric
MOSFET
Optoelectronics
Engineering
6
Papers
22
Citations
0.00
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing
2013
Microelectronics Reliability
Izumi Hirano
Yasushi Nakasaki
Shigeto Fukatsu
Masakazu Goto
Koji Nagatomo
Seiji Inumiya
Katsuyuki Sekine
Yuichiro Mitani
Kikuo Yamabe
Show All
Source
Cite
Save
Citations (5)
Bottom-La Inserted HfSiON Gate Dielectrics with MOCVD HfCN Metal Gate Electrode Realizing High Mobility and Reliability Improvement
2009
The Japan Society of Applied Physics
Seiji Inumiya
Akio Kaneko
Koji Nagatomo
Masakazu Goto
Kosuke Tatsumura
Izumi Hirano
Shigeru Kawanaka
A. Azuma
Kazuaki Nakajima
Tomonori Aoyama
Kazuhiro Eguchi
Akira Nishiyama
Y. Toyoshima
Yoshitaka Tsunashima
Show All
Source
Cite
Save
Citations (0)
Impact of tantalum composition in TaC/HfSiON gate stack on device performance of aggressively scaled CMOS devices with SMT and strained CESL
2008
VLSIT | Symposium on VLSI Technology
Masakazu Goto
Kosuke Tatsumura
Shigeru Kawanaka
Kazuaki Nakajima
Reika Ichihara
Y. Yoshimizu
H. Onoda
Koji Nagatomo
T Sasaki
T. Fukushima
Akiko Nomachi
Seiji Inumiya
H. Oguma
K. Miyashita
Hideaki Harakawa
Satoshi Inaba
T. Ishida
A. Azuma
Takayuki Aoyama
Masato Koyama
Kazuhiro Eguchi
Y. Toyoshima
Show All
Source
Cite
Save
Citations (5)
HfSiON gate dielectric technology for CMOSFET application
2006
SSICT | International Conference on Solid-State and Integrated Circuits Technology
Tomonori Aoyama
Motoyuki Sato
Katsuyuki Sekine
Koji Nagatomo
Takeshi Watanabe
Yoshinori Tsuchiya
Takuya Kobayashi
Shigeru Kawanaka
A. Azuma
Mariko Takayanagi
Y. Toyoshima
Masato Koyama
Akira Nishiyama
Kazuhiro Eguchi
Yoshitaka Tsunashima
Show All
Source
Cite
Save
Citations (2)
1