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E. Cartier

IBM

218

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Pulse-Train Method to Measure Transient Response of Field-Effect Transistors

2019 IEEE Electron Device Letters
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Innovations lexicales, néologie de la communication et terminologie spontanée autour d'"Instagram" entre mode et marketing

2019
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PBTI in InGaAs MOS capacitors with Al 2 O 3 /HfO 2 /TiN gate stacks: Interface-state generation

2018 IRPS | International Reliability Physics Symposium
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High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process

2017 VLSIT | Symposium on VLSI Technology
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Charge Trap Transistor (CTT): An Embedded Fully Logic-Compatible Multiple-Time Programmable Non-Volatile Memory Element for High- $k$ -Metal-Gate CMOS Technologies

2017 IEEE Electron Device Letters
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High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering

2017 IEDM | International Electron Devices Meeting
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Electron mobility in thin In0.53Ga0.47As channel.

2017 ESSDERC | European Solid-State Device Research Conference
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High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length

2017 VLSIT | Symposium on VLSI Technology
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High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment

2017 IEEE Electron Device Letters
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Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

2016 VLSIT | Symposium on VLSI Technology
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