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T. G. Kolesnikova
T. G. Kolesnikova
Moscow State Institute of Radio Engineering, Electronics and Automation
Capacitor
Atomic physics
Physics
Nuclear magnetic resonance
Solid solution
6
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2
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Deep-level trapping centers in heterostructures for GaN field-effect transistors
2007
Journal of Communications Technology and Electronics
M. S. Andreev
L. É. Velikovskiĭ
T. S. Kitichenko
T. G. Kolesnikova
A. P. Korovin
V. G. Mokerov
S. N. Yakunin
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The effect of X-ray radiation on the structural and electrical properties of CdZnTe solid solution
2003
Physica Status Solidi (c)
E. M. Pashaev
V. N. Peregudov
S. N. Yakunin
A. A. Zaitsev
T. G. Kolesnikova
Zs. J. Horváth
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X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 – xZnxTe
2002
Russian Microelectronics
E. M. Pashaev
V. N. Peregudov
S. N. Yakunin
A. A. Zaitsev
T. G. Kolesnikova
A. P. Korovin
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Deep Traps in ZnxCd1 – xTe(Cl) Solid Solutions
2001
Russian Microelectronics
A. A. Glebkin
T. S. Kitichenko
T. G. Kolesnikova
A. P. Korovin
V. A. Chapnin
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Deep Traps in Zn x Cd1 x Te(Cl) Solid Solutions
2001
Russian Microelectronics
A. A. Glebkin
T. S. Kitichenko
T. G. Kolesnikova
A. P. Korovin
V. A. Chapnin
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Deep traps in heteroepitaxial SOS layers subjected to various treatments
2000
Russian Microelectronics
A.S. Adonin
A V Bespalov
T. S. Kitichenko
T. G. Kolesnikova
A. P. Korovin
M. V. Shiryaeva
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