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S. N. Yakunin
S. N. Yakunin
Moscow State Institute of Radio Engineering, Electronics and Automation
Capacitor
Nuclear magnetic resonance
Heterojunction
Physics
Optics
3
Papers
7
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Deep-level trapping centers in heterostructures for GaN field-effect transistors
2007
Journal of Communications Technology and Electronics
M. S. Andreev
L. É. Velikovskiĭ
T. S. Kitichenko
T. G. Kolesnikova
A. P. Korovin
V. G. Mokerov
S. N. Yakunin
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Citations (1)
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction
2002
Russian Microelectronics
E. M. Pashaev
S. N. Yakunin
A. A. Zaitsev
V. G. Mokerov
Yu. V. Fedorov
R. M. Imamov
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X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 – xZnxTe
2002
Russian Microelectronics
E. M. Pashaev
V. N. Peregudov
S. N. Yakunin
A. A. Zaitsev
T. G. Kolesnikova
A. P. Korovin
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