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L. É. Velikovskiĭ
L. É. Velikovskiĭ
Heterojunction
Optoelectronics
Nuclear magnetic resonance
Field-effect transistor
Electron mobility
4
Papers
2
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0
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Development of the microwave nanoelectronics: From the solution of design, technology and training problems to development of the first professional standards
2013
CriMiCo | International Crimean Conference Microwave and Telecommunication Technology
V. V. Dotsenko
V.A. Kagadei
A. V. Kondratenko
L. É. Velikovskiĭ
E. V. Shesterikov
G I Gumerova
N. D. Maljutin
L. I. Babak
P. E. Troyan
A. N. Maljutina
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Deep-level trapping centers in heterostructures for GaN field-effect transistors
2007
Journal of Communications Technology and Electronics
M. S. Andreev
L. É. Velikovskiĭ
T. S. Kitichenko
T. G. Kolesnikova
A. P. Korovin
V. G. Mokerov
S. N. Yakunin
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Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
2006
Technical Physics Letters
A. N. Alekseev
S. B. Aleksandrov
A. É. Byrnaz
L. É. Velikovskiĭ
I. É. Velikovskiĭ
A. V. Veretekha
D. M. Krasovitskiĭ
M. V. Pavlenko
S. I. Petrov
M. Yu. Pogorel’skiĭ
Yu. V. Pogorel’skii
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
A. G. Tkachenko
A. P. Shkurko
V. P. Chalyĭ
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Multilayer AlN/AlGaN/GaN/AlGaN Heterostructures for High-Power Field-Effect Transistors Grown by Ammonia MBE
2005
Technical Physics Letters
A. N. Alekseev
S. B. Aleksandrov
A. É. Byrnaz
L. É. Velikovskiĭ
I. É. Velikovskiĭ
D. M. Krasovitskiĭ
M. V. Pavlenko
S. I. Petrov
Yu. V. Pogorel’skii
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
A. G. Tkachenko
A. P. Shkurko
V. P. Chalyĭ
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