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Annalisa Cappellani

Intel

12

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The ultimate CMOS device and beyond

2012 IEDM | International Electron Devices Meeting
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Integrated complementary metal oxide semiconductor circuit using a raised source-drains and a replacement metal gates

2006
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Circuit integre a semi-conducteur complementaire a l'oxyde de metal dans lequel sont utilises un drain et une source sureleves et une grille metallique de remplacement

2006
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A method for manufacturing an integrated complementary metal oxide semiconductor circuit using a raised source-drains and a replacement metal gates

2006
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A method of manufacturing a semiconductor device having a high-K gate dielectric layer and a gate electrode made of metal

2005
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