A method of manufacturing a semiconductor device having a high-K gate dielectric layer and a gate electrode made of metal

A method of manufacturing a semiconductor element, comprising: Forming a first dielectric layer (105) on a substrate (100); Forming a trench (113) within the first dielectric layer (105); Forming a second dielectric layer (115) on the substrate (100), said second dielectric layer (115) comprises a first part (118) and a second portion (123) wherein the first part (118) (on the bottom of the trench 113) is formed; Forming a metal layer on the first (118) and second part (123) of the second dielectric layer (115); Forming a spun-on the metal layer, wherein a first portion of the spun-on the first part (118) of the second dielectric layer (115) and a second portion of the spun-obscures the second part (123) of the second dielectric layer (115); Removing the second portion of the spun-on while maintaining the first portion of the spun-on to expose a portion of the metal layer; Removing the exposed part of ...