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Robert Langer

Katholieke Universiteit Leuven

44

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Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates

2021 Crystal Growth & Design
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Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations

2020 Ultramicroscopy
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Enhancing the defect contrast in ECCI through angular filtering of BSEs

2020 Ultramicroscopy
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Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

2019 Japanese Journal of Applied Physics
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GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

2019 IEDM | International Electron Devices Meeting
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High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

2019 VLSIT | Symposium on VLSI Technology
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First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

2019 IEDM | International Electron Devices Meeting
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Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

2019 ECS Journal of Solid State Science and Technology
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First demonstration of vertically-stacked Gate-All-Around highly-strained Germanium nanowire p-FETs

2018 VLSIT | Symposium on VLSI Technology
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(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration

2018
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