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Steven Folkersma

Katholieke Universiteit Leuven

8

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Apparent size effects on dopant activation in nanometer-wide Si fins

2021 Journal of Vacuum Science & Technology B
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Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment

2019 Japanese Journal of Applied Physics
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Electrical Contact Formation in Micro Four‐Point Probe Measurements

2019 Physica Status Solidi (a)
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Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe

2018 Physica Status Solidi (a)
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Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe

2018
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