First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BV CBO , of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.